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| leshan radio company, ltd. lbss84lt1g 1 sot ?23 2 3 p?channel sot?23 these miniature surface mount mosfets reduce power loss conserve energy, making this device ideal for use in small power management circuitry. typical applications are dc?dc converters, load switching, power management in portable and battery?powered products such as computers, printers, cellular and cordless telephones. ? energy efficient ? miniature sot?23 surface mount package saves board space symbol value unit drain?to?source voltage v dss 50 v dc gate?to?source voltage ? continuous v gs 20 v dc drain current ? continuous @ t a = 25 c ? pulsed drain current (t p 10 s) i d i dm 130 520 ma total power dissipation @ t a = 25 c p d 225 mw operating and storage temperature range t j ,t stg ? 55 to 150 c thermal resistance ? junction?to?ambient r ja 556 c/w maximum lead temperature for soldering purposes, for 10 seconds t l 260 c rating maximum ratings (t j = 25 c unless otherwise noted) 3 drain 1 - gate source marking diagram m ? pb-free package is available. device package shipping lbss84lt1g sot-23 3000/tape&reel lbss84lt3g sot-23 10000/tape&reel ordering information 130 pd = device code m = month code pd ? we declare that the material of product are halogen free and compliance with rohs requirements. rev .a 1/4 s-lbss84lt1g s- prefix for automotive and other applications requiring unique site and control change requirements; aec-q101 qualified and ppap capable. ? s-lbss84lt1g s-lbss84lt3g electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain?to?source breakdown voltage (v gs = 0 vdc, i d = 250 adc) v (br)dss 50 ? ? vdc zero gate voltage drain current (v ds = 25 vdc, v gs = 0 vdc) (v ds = 50 vdc, v gs = 0 vdc) (v ds = 50 vdc, v gs = 0 vdc, t j = 125 c) i dss ? ? ? ? ? ? 0.1 15 60 adc gate?body leakage current (v gs = 20 vdc, v ds = 0 vdc) i gss ? ? 10 nadc on characteristics (note 1.) gate?source threaded voltage (v ds = v gs , i d = 250 adc) v gs(th) 0.8 ? 2.0 vdc static drain?to?source on?resistance (v gs = 5.0 vdc, i d = 100 madc) r ds(on) ? 5.0 10 ohms transfer admittance (v ds = 25 vdc, i d = 100 madc, f = 1.0 khz) |y fs | 50 ? ? ms dynamic characteristics input capacitance (v ds = 5.0 vdc) c iss ? 30 ? pf output capacitance (v ds = 5.0 vdc) c oss ? 10 ? transfer capacitance (v dg = 5.0 vdc) c rss ? 5.0 ? switching characteristics (note 2.) turn?on delay time t d(on) ? 2.5 ? ns rise time (v dd = ?15 vdc, i d = ?2.5 adc, t r ? 1.0 ? turn?off delay time (v dd 15 vdc , i d 2 . 5 adc , r l = 50 ? ) t d(off) ? 16 ? fall time t f ? 8.0 ? gate charge q t ? 6000 ? pc source?drain diode characteristics continuous current i s ? ? 0.130 a pulsed current i sm ? ? 0.520 forward voltage (note 2.) v sd ? 2.5 ? v 1. pulse test: pulse width 300 s, duty cycle 2%. 2. switching characteristics are independent of operating junction temperature. typical electrical characteristics figure 1. transfer characteristics figure 2. on?region characteristics ! ! " leshan radio company, ltd. rev .a 2/4 lbss84lt1g,s-lbss84lt1g lbss84lt1g,s-lbss84lt1g #$ % #$ & figure 3. on?resistance versus drain current figure 4. on?resistance versus drain current figure 5. on?resistance variation with temperature " " figure 6. gate charge ' #$ & ( & ) " ! ! ! typical electrical characteristics * + figure 7. body diode forward voltage " leshan radio company, ltd. rev .a 3/4 notes: 1. dimensioning and tolerancing per ansi y14.5m,1982 2. controlling dimension: inch. inches millimeters dim min max min max a 0.1102 0.1197 2.80 3.04 b 0.0472 0.0551 1.20 1.40 c 0.0350 0.0440 0.89 1.11 d 0.0150 0.0200 0.37 0.50 g 0.0701 0.0807 1.78 2.04 h 0.0005 0.0040 0.013 0.100 j 0.0034 0.0070 0.085 0.177 k 0.0140 0.0285 0.35 0.69 l 0.0350 0.0401 0.89 1.02 s 0.0830 0.1039 2.10 2.64 v 0.0177 0.0236 0.45 0.60 pin 1. base 2. emitter 3. collector sot - 23 d j k l a c b s h g v 12 3 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 leshan radio company, ltd. rev .a 4/4 lbss84lt1g,s-lbss84lt1g |
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